The Transistor Transistor Tester Powered by 9V layer-built battery, can use 2 Li-ion batteries to form a 8.4V battery pack for long-term power.
Measuring the bipolar transistor current gain factor and the base-emitter threshold voltage.
Automatically test the pin of a component and display on the 128 * 64 LCD backlight.
Measure the gate and gate capacitances of the MOSFET threshold voltage.
Single-button operation, automatic shutdown, only 20nA cut-off current.
Eeverse breakdown voltage is less than 4.5V, Zener diode can be identified.
2uF, further capacitors can simultaneously measure the ESR values of the corresponding series resistors.
Through the base-emitter threshold voltage and the high current gain factor to identify Darlington transistors.
Simultaneous measurement of two resistors and resistance symbol is displayed. Shown on the right with a decimal value of 4.
Can the transistor, MOSFET protection diode gain coefficients and the base to determine the emitter-transistor forward voltage.
Automatic detection of NPN and PNP transistors, n-channel and p-channel MOSFET, diode (including double diode), thyristor, transistor, resistor and capacitor and other components.
Automatic shutdown, to avoid unnecessary waste, saving battery, improved battery life.
Use 12864 liquid crystal display with green backlight
Material: Circuit board
Display: 128 * 64 LCD background lighting
Test speed: 2 seconds (1 minute is normal for large capacitor)
Displayed value: 25pf-100mF (resolution 1pF)
Inductance: 0.01 mH-20H
Power Voltage: 9V layer-built battery / 2 Li-ion batteries to form an 8.4V battery
Resolution of resistance measurement: 0.1 Ohm
The highest reading: 50M ohms
Test procedure: Approx. 6mA
Product Size: 10 * 8cm (L * W)
1.One button operation, automatic shutdown.
2.Only 20nA shutdown current.
3.Automatically detect NPN, PNP bipolar transistors, N-channel and P-channel MOS FET, JFET, diodes, two diodes, thyristors low power unidirectional and bidirectional thyristor.
4.Automatic identification components pin arrangement.
5.Measuring bipolar transistor current gain factor and base emitter threshold voltage.
6.Via to identify the base-emitter threshold voltage and high current amplification factor to Darlington transistors.
7.Can detect bipolar transistors and MOS transistors protection diodes.
8.Measuring gate MOS FET threshold voltage and gate capacitance.
9.Can simultaneously measure two resistors and resistance symbol is displayed. To the right shows a decimal value of 4. Resistance symbol on both sides shows the pin number. This is how you can measure the potentiometer. If the potentiometer wiper is not placed in an extreme position, we can distinguish the center and the two ends of the pin.
10.Resistance measurement leakage is 0.1 Ohm, 50M Ohm can be measured.
11.Can measurement capacitance, Can measurement capacity of 25pF-100mF, 1pF resolution.
12.2uF further capacitors can simultaneously measure the equivalent series resistor ESR values. The two can be displayed with a decimal value, resolution 0.01 Ohm.
13.Can be in the right order and the diode symbol display two diodes, and give the diode's forward voltage.
14.LED is detected as a diode forward voltage higher. Combo of the LED is called two diodes.
15.Everse breakthrough voltage is less than 4.5V Zener diode can be identified.
16.Can measure a single diode return capacity. When the bipolar transistor is connected to the base and the collector or emitter of a pin, it can measure the backward capacitance of the collector or emitter junction.
17 can be obtained with a single bridge-to-bridge bridge connection.
Note: Before capacitance measurement, the capacitor must be discharged, as otherwise the measuring instrument can be severely damaged.
1 x ESR Counter Transistor Tester